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27291SL 参数 Datasheet PDF下载

27291SL图片预览
型号: 27291SL
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管 [RF Power Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 15 页 / 569 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
0
ACPR (dBc), ALT1 (dBc)
−5
−10
−15
−20
η
D
, DRAIN
EFFICIENCY (%)
0
−5
−10
−15
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
IRL, INPUT RETURN LOSS (dB)
23
22
G
ps
, POWER GAIN (dB)
21
20
19
18
ACPR
17
ALT1
16
800
820
840
860
880
900
920
940
960
f, FREQUENCY (MHz)
−70
−60
V
DD
= 28 Vdc
P
out
= 10 W (Avg.) I
DQ
= 350 mA
N−CDMA IS−95 Pilot Sync, Paging
Traffic Codes 8 Through 13
IRL
η
D
34
32
G
ps
30
−30
−40
−50
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
out
= 10 Watts Avg.
23
22
21
G
ps
, POWER GAIN (dB)
20
19
18
17
16
15
800
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 20 W (Avg.)
I
DQ
= 350 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
50
40
30
−20
ACPR
−30
−40
−50
ALT1
IRL
820
840
860
880
900
920
940
960
−60
−70
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
out
= 20 Watts Avg.
24
23
G
ps
, POWER GAIN (dB)
22
21
20
19
18
17
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
V
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
350 mA
262.5 mA
175 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 525 mA
437.5 mA
−10
V
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
I
DQ
= 175 mA
−30
−40
262.5 mA
350 mA
−50
437.5 mA
−60
1
10
525 mA
100
200
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9045NR1
6
RF Device Data
Freescale Semiconductor