Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) V
DD
= 28 Vdc,
I
DQ
= 350 mA, P
out
= 16 W Avg., f = 920 - 960 MHz, GSM EDGE Signal
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
20
46
1.5
- 62
- 78
—
—
—
—
—
dB
%
%
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 350 mA,
P
out
= 45 W, f = 920 - 960 MHz
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
(f = 940 MHz)
G
ps
η
D
IRL
P1dB
—
—
—
—
20
68
- 12
52
—
—
—
—
dB
%
dB
W
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 350 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 48 W PEP P
out
where IM3 = - 30 dBc
VBW
(Tone Spacing from 100 kHz to VBW)
—
10
—
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
out
= 10 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
G
F
ΔG
ΔP1dB
—
—
—
0.72
0.011
0.006
—
—
—
MHz
dB
dB/°C
dBm/°C
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
3
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
