TYPICAL CHARACTERISTICS
23
22
G
ps
, POWER GAIN (dB)
21
20
19
18
17
16
0
50
25 V
V
DD
= 20 V
100
150
200
250
P
out
, OUTPUT POWER (WATTS) CW
30 V
40 V
35 V
I
DQ
= 900 mA
f = 450 MHz
300
350
400
45 V
50 V
P
out
, OUTPUT POWER (dBm)
60
25_C
T
C
= --30_C
85_C
50
45
40
35
15
V
DD
= 50 Vdc
I
DQ
= 900 mA
f = 450 MHz
20
25
30
35
40
55
P
in
, INPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
25
24
G
ps
, POWER GAIN (dB)
23
22
21
20
19
18
10
85_C
η
D
V
DD
= 50 Vdc
I
DQ
= 900 mA
f = 450 MHz
100
P
out
, OUTPUT POWER (WATTS) CW
G
ps
T
C
= --30_C
85_C
25_C
--30_C
25_C
80
70
60
50
40
30
20
10
500
10
5
90
η
D,
DRAIN EFFICIENCY (%)
10
7
10
8
Figure 11. Power Output versus Power Input
MTTF (HOURS)
10
6
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 50 Vdc, P
out
= 300 W, and
η
D
= 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
Figure 13. MTTF versus Junction Temperature
MRF6V4300NR1 MRF6V4300NBR1
6
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
