TYPICAL CHARACTERISTICS
−10
−10
−20
IRL
−20
−30
−40
−50
−60
V
= 12 Vdc, I = 85 mA
DQ
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
DS
−30
−40
−50
−60
Γ = 0.868é−115.15_, Γ = 0.764é−139.11_
S
L
ACPR
0.01
0.1
, OUTPUT POWER (WATTS)
1
P
out
Figure 3. W-CDMA ACPR and Input Return
Loss versus Output Power
20
17.5
15
40
35
30
25
20
15
10
PAE
V
= 12 Vdc, I = 85 mA
DQ
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
DS
Γ = 0.868é−115.18_, Γ = 0.764é−139.11_
S
L
G
12.5
10
T
7.5
5
2.5
0
5
0
0.01
0.1
, OUTPUT POWER (WATTS)
1
P
out
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS andΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35005MT1
RF Device Data
Freescale Semiconductor
5