Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(V = 3.5 Vdc, V = 0 Vdc)
I
—
1.7
—
Adc
DSS
GSS
DSO
DS
GS
Off State Leakage Current
(V = -0.4 Vdc, V = 0 Vdc)
I
—
—
< 1.0
—
100
600
9
µAdc
µAdc
mAdc
Vdc
Vdc
dB
GS
DS
Off State Drain Current
I
(V = 12 Vdc, V = -2.5 Vdc)
DS
GS
Off State Current
I
—
< 1.0
-0.9
-0.8
11
DSX
(V = 28.5 Vdc, V = -2.5 Vdc)
DS
GS
Gate-Source Cut-off Voltage
(V = 3.5 Vdc, I = 8.7 mA)
V
GS(th)
V
GS(Q)
-1.2
-1.1
10
-0.7
-0.6
—
DS
DS
Quiescent Gate Voltage
(V = 12 Vdc, I = 80 mA)
DS
D
Power Gain
G
ps
(V = 12 Vdc, I
= 80 mA, f = 3.55 GHz)
DD
DQ
Output Power, 1 dB Compression Point
P
—
4.5
—
W
1dB
(V = 12 Vdc, I
= 80 mA, f = 3.55 GHz)
DD
DQ
Drain Efficiency
h
22
25
—
%
D
(V = 12 Vdc, I
= 80 mA, P = 450 mW Avg.,
out
DD
DQ
f = 3.55 GHz)
Adjacent Channel Power Ratio
(V = 12 Vdc, P = 450 mW Avg., I = 80 mA,
ACPR
—
-42
-39
dBc
DD
out
DQ
f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
MRFG35005MT1
RF Device Data
Freescale Semiconductor
2
FREESCALE [ Freescale ]
