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HFM106-MH 参数 Datasheet PDF下载

HFM106-MH图片预览
型号: HFM106-MH
PDF下载: 下载PDF文件 查看货源
内容描述: 芯片硅整流 - 超快速恢复型 [Chip Silicon Rectifier - Ultra fast recovery type]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 84 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号HFM106-MH的Datasheet PDF文件第1页  
RATING AND CHARACTERISTIC CURVES (HFM101-MH THRU HFM107-MH)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
1-M
H~
HF
M1
HF
03
M1
-M
04
H
-M
H
INSTANTANEOUS FORWARD CURRENT,(A)
HF
M1
0
.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
HF
M
10
5-
M
H~
1.0
HF
M
10
7-
M
H
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
25
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
20
FORWARD VOLT
AGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
15
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
10
5
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
trr
+0.5A
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JUNCTION CAPACITANCE,(pF)
120
100
80
60
40
20
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)