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HFM106-MH 参数 Datasheet PDF下载

HFM106-MH图片预览
型号: HFM106-MH
PDF下载: 下载PDF文件 查看货源
内容描述: 芯片硅整流 - 超快速恢复型 [Chip Silicon Rectifier - Ultra fast recovery type]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 84 K
品牌: FORMOSA [ FORMOSA MS ]
 浏览型号HFM106-MH的Datasheet PDF文件第2页  
Formosa MS
HFM101-MH THRU HFM107-MH
Chip Silicon Rectifier
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
Mechanical data
Case : Molded plastic, JEDEC SOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.0393 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
CONDITIONS
Ambient temperature = 50
o
C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
25
5.0
150
UNIT
A
A
uA
uA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
42
20
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
H1
H2
H3
H4
H5
H6
H7
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
T
RR
*5
Operating
temperature
(
o
C)
(V)
HFM101-MH
HFM102-MH
HFM103-MH
HFM104-MH
HFM105-MH
HFM106-MH
HFM107-MH
50
100
200
400
600
800
1000
(V)
35
70
140
280
420
560
700
(V)
50
100
200
400
600
800
1000
(V)
(nS)
1.0
50
1.3
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
1.7
75
*4 Maximum forward voltage
*5 Reverse recovery time