Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=350mA, f=1800MHz)
Power Transfer Characteristic
Drain Efficiency and PAE
34.00
32.00
30.00
28.00
26.00
24.00
22.00
20.00
18.00
3.50
3.00
2.50
2.00
1.50
1.00
.50
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
PAE
Eff.
Pout
Comp Point
.00
-.50
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
22.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
22.00
24.00
Input Power (dBm)
Input Power (dBm)
IMProducts vs. Input Power
FPD2000AS I-V Curves
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
-55.00
-60.00
27.00
25.00
23.00
21.00
19.00
17.00
1.400
VGS = 0V
1.200
1.000
.800
.600
.400
.200
.000
Pout
Im3, dBc
VGS = -0.25V
VGS = -0.50V
VGS = -0.75V
VGS = -1.0V
VGS = -1.25V
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
3.00
5.00
7.00
9.00
11.00
13.00
Drain-Source Voltage (V)
Input Power (dBm)
FPD2000AS POWER CONTOURS 2 GHz
FPD2000AS IP3 CONTOURS 2 GHz
Swp Max
181
Swp Max
244
IP3_dBm = 44 dBm
Pout_dBm = 22 dBm
IP3_dBm = 42 dBm
IP3_dBm = 50 dBm
IP3_dBm = 40 dBm
Pout_dBm = 32 dBm
Pout_dBm = 34 dBm
IP3_dBm = 52 dBm
IP3_dBm = 48 dBm
Pout_dBm = 30 dBm
Pout_dBm = 28 dBm
IP3_dBm = 46 dBm
Pout_dBm = 26 dBm
Swp Min
1
Swp Min
1
Pout_dBm = 24 dBm
NOTE: Power contours measured at
constant input power, level set to meet
nominal P1dB rating at optimum match
point. Optimum match:
NOTE: IP3 contours generated with PIN
11dB back-off from P1dB. Local maxima for best
linearity located at:
ΓL = 15 + j4.5 Ω and ΓL = 28 – j25 Ω
with ΓS = 9.5 - j4 Ω
=
ΓS = 3 – j6 Ω and ΓL = 11 – j3 Ω
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
