L
OW
N
OISE
, H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
•
REFERENCE DESIGNS (0.9 & 1.85GHZ)
FPD1500SOT89
Frequency
Gain
P1dB
IP3
S11
S22
Vd
Vg
Id
GHz
dB
dBm
dBm
dB
dB
V
V
mA
0.9
1.85
20
16
27
27
38
40
-5
-9
-15
-14
5
5
-0.4 to -0.6 -0.4 to -0.6
200
200
Component Values
Component
Lg
Ld
L1
L2
C1
0.9GHz
47nH
47nH
12nH
4.7nH
5.6pF
1.85GHz
27nH
27nH
1.5nH
4.7nH
2.2pF
Eval board material - 31mil thick FR4 with 1/2 Ounce Cu
on both sides
●
Negative gate voltage required to be established before drain bias
●
Use test clips at the bias vias at the top and bottom of the board for biasing
Eval Board Layout
Vg
33pF
0.01uF
20
O
Lg
33pF
L1
33pF
0.01uF
Vd
+
1.0uF
+
Q1
Ld
C1
33pF
L2
Eval board Schematic
DCVS
ID=V2
V=-0.5 V
RES
ID=R1
R=20 Ohm
CAP
ID=C6
C=33 pF
IND
ID=L2
L=Ld nH
MLIN
ID=TL13
W=35 mil
L=95 mil
MLIN
ID=TL11
W=10 mil
L=30 mil
MLIN
ID=TL7
W=73 mil
L=60 mil
1
1
DCVS
ID=V1
V=5 V
CAP
ID=C5
C=33 pF
IND
ID=L4
L=Lg nH
MLIN
ID=TL4
W=10 mil
L=30 mil
MLIN
ID=TL2
W=73 mil
L=60 mil
1
2
MLIN
ID=TL6
W=35 mil
L=153 mil
CAP
ID=C2
C=33 pF
PORT
P=1
Z=50 Ohm
MLIN
ID=TL9
W=98 mil
L=105 mil
3
2
IND
ID=L3
L=L1 nH
2
MTEE
ID=TL1
W1=98 mil
W2=98 mil
W3=105 mil
1
2
3
CAP
ID=C1
C=33 pF
PORT
P=2
Z=50 Ohm
3
MTEE
ID=TL12
W1=98 mil
W2=98 mil
W3=40 mil
MTEE
ID=TL5
W1=98 mil
W2=98 mil
W3=40 mil
CAP
ID=C4
C=C1 pF
SUBCKT
ID=S1
NET="FPD1500SOT89"
IND
ID=L1
L=L2 nH
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised11/11/05
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
