Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
Drain Efficiency and PAE
Power Transfer Characteristic
3.50
3.00
2.50
2.00
1.50
1.00
.50
29.00
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
70.00%
Pout
Comp Point
27.00
25.00
23.00
21.00
19.00
17.00
15.00
13.00
60.00%
PAE
Eff.
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
.00
-.50
-2.00
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
-2.00
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
Typical Intermodulation Performance
VDS = 5V IDS = 50% IDSS at f = 1.85GHz
-10.00
25.00
-15.00
-20.00
23.00
-25.00
-30.00
21.00
-35.00
19.00
-40.00
-45.00
17.00
-50.00
15.00
-1.00
-55.00
11.00
1.00
3.00
5.00
7.00
9.00
Input Power (dBm)
Pout
Im3, dBc
Note:
intermodulation performance. This yields OIP3
values of about P1dB 14dBm. This IMD
enhancement is affected by the quiescent bias and
pHEMT
devices have
enhanced
+
the matching applied to the device
.
TYPICAL I-V CHARACTERISTICS
DC IV Curves FPD1500SOT89
0.60
0.50
0.40
0.30
0.20
0.10
0.00
Note: The recommended method for measuring IDSS, or
any particular IDS, is to set the Drain-Source voltage (VDS
)
VG=-1.5V
VG-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.5V
VG=-0.25V
VG=0V
at 1.3V. This measurement point avoids the onset of
spurious self-oscillation which would normally distort the
current measurement (this effect has been filtered from
the I-V curves presented above). Setting the VDS > 1.3V
will generally cause errors in the current measurements,
even in stabilized circuits.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
