FPD1000AS
1W P
ACKAGED
P
OWER P
HEMT
FPD1000AS POWER CONTOURS 1800 MHz
0.8
0.6
2.0
0.4
1.0
Swp Max
215
28 dBm
29 dBm
30 dBm
3.0
4.0
5.0
0.2
31 dBm
32 dBm
10.0
2.0
3.0 4.0 5.0
10.
0
0
0.2
0.4
0.6
0.8 1.0
-10.0
-0.2
-5.0
-0.4
-
0.6
NOTE:
-4.0
Power contours measured at constant
input power, level set to meet
-3.0
nominal P1dB rating at optimum
match point. Optimum match:
-
Γ
S
= 3 – j2
Ω
and
Γ
L
= 25 + j5
Ω
2.0
-
0.8
-
1.0
Swp Min
1
FPD1000AS I-V Curves
.800
.700
Drain-Source Current (A)
.600
.500
.400
.300
.200
.100
.000
0.00
VGS = -1.0V
VGS = -1.25V
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
VGS = -0.5V
VGS = -0.25V
VGS = 0V
VGS = -0.75V
Drain-Source Voltage (V)
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
05/26/05
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
