FPD1000AS
1W P
ACKAGED
P
OWER P
HEMT
•
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 5V to 10V
Quiescent Current:
From 25% I
DSS
to 55% I
DSS
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Gain Compression
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +8V
For V
DS
> 2V
Forward / Reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
-40
Min
Max
12
-3
I
DSS
+20/-20
575
175
150
6.0
5
Units
V
V
mA
mA
mW
ºC
ºC
W
dB
%
•
Simultaneous Combination of Limits
3
2 or more Max. Limits
80
1
2
T
Ambient
= 22°C unless otherwise noted
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
•
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
•
Total Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
•
Total Power Dissipation to be de-rated as follows above 22°C:
P
TOT
= 3.5 - (0.04W/°C) x T
PACK
where T
PACK
=
source tab lead temperature above 22
°
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55°C source lead temperature: P
TOT
= 6.0 - (0.04 x (55 – 22)) = 4.68W
•
For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central
metallized ground pad on the bottom of the package.
•
Note on Thermal Resistivity:
The nominal value of 25°C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to
the Source leads.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human
Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
05/26/05
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
