Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=200mA, f=1800MHz)
Power Transfer Characteristic
Drain Efficiency and PAE
3.50
3.00
2.50
2.00
1.50
1.00
.50
31.00
29.00
27.00
25.00
23.00
21.00
19.00
17.00
15.00
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
PAE
Eff.
Pout
Comp Point
.00
-.50
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
Input Power (dBm)
Input Power (dBm)
IMProducts vs. Input Power
FPD1000AS I-V Curves
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
-55.00
27.00
25.00
23.00
21.00
19.00
17.00
.800
.700
.600
.500
.400
.300
.200
.100
.000
VGS = 0V
VGS = -0.25V
VGS = -0.5V
Pout
Im3, dBc
VGS = -0.75V
VGS = -1.0V
VGS = -1.25V
6.00 7.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.00
1.00
2.00
3.00
4.00
5.00
8.00
Drain-Source Voltage (V)
Input Power (dBm)
FPD1000AS IP3 CONTOURS 1800 MHz
FPD1000AS POWER CONTOURS 1800 MHz
Swp Max
1.0
Swp Max
215
0.8
222
0.6
2.0
28 dBm
29 dBm
0.4
3.0
48 dBm
46 dBm
44 dBm
42 dBm
30 dBm
4.0
5.0
0.2
31 dBm
40 dBm
32 dBm
10.0
10.
0
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.05.0
0
-10.0
-0.2
-5.0
-4.0
-3.0
-0.4
-
-
2.0
0.6
-
0.8
Swp Min
1
-
1.0
Swp Min
1
NOTE:
IP3 contours generated with PIN = 11dB
NOTE:
Power contours measured at constant
input power level set to meet Optimum
P1dB at the output match. Optimum
match:
back-off from P1dB. Local maxima for best
linearity located at:
ΓL = 40 + j55 Ω and ΓL = 113 + j70 Ω
with ΓS = 15 + j12 Ω
ΓS = 3 – j2 Ω and ΓL = 25 + j5 Ω
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
