FP1500QFN
P
ACKAGED
L
OW
N
OISE
, H
IGH
L
INEARITY
PHEMT
Low Noise Design
V
DS
=5V, I
DS
=125mA
Freq.
GHz
0.9
1.8
2.2
2.4
3.2
4.5
5.0
6.0
N. F. (min)
dB
0.67
0.76
0.75
0.80
0.91
1.11
1.09
1.15
Optimized Input Gamma
(Γs) Mag.<Ang.
0.17<45°
0.33<81°
0.31<97.4°
0.32<107.9°
0.34<142.8°
0.46<163°
0.49<169.4°
0.50<-177.5°
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
All information and specifications are subject to change without notice.
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
10/17/02
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
