FP1500QFN
P
ACKAGED
L
OW
N
OISE
, H
IGH
L
INEARITY
PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Test Conditions
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
—
T
Ambient
= 22
±
3
°C
Min
Max
6
-3
I
DSS
15
350
175
175
2.7
Units
V
V
mA
mA
mW
ºC
ºC
W
-65
Notes:
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
•
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
•
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
P
TOT
= 2.7W – (0.018W/°C) x T
PACK
where T
PACK
=
source tab lead temperature.
(Bottom of the Package)
•
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
•
PCB PAD LAYOUT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
10/17/02
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
