CMP0417AAx-E
CMOS LPRAM
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FEATURES
• Three state output and TTL Compatible
• Package Type : 48-FBGA-6.00x8.00 mm
• Process Technology : Full CMOS
2
• Organization : 256K x 16
• Power Supply Voltage : 2.7~3.3V
• Separated I/O power(VCCQ) & Core Power(VCC)
• Low Power & Page Modes
• Page read/write operation up to 16 words
CMP0417AA1 : support the PASR function
CMP0417AA2 : support the DPD function
CMP0417AA4 : support the PASR/PAGE function
CMP0417AA5 : support the DPD/PAGE function
(CMP0417AA4, CMP0417AA5)
• DPD mode when /ZZ goes low
(CMP0417AA2, CMP0417AA5)
PRODUCT FAMILY
Power Dissipation
Operating
Voltage (V)
ISB1
ICC1
ICC2
Operating
Speed
Product Family
(CMOS Standby
Current)
Temperature
f = 1MHz
f = fmax
Min. Typ. Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Industrial
70ns
1.5mA
3mA
12mA
20mA
30uA
70uA
CMP0417AAx-F70E
2.7 3.0 3.3
(-25~85’C)
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C.
2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
Precharge circuit.
Clk gen.
/LB
/OE
/UB
A0
A3
A1
A4
A2
/ZZ
A
B
I/O9
/CS
I/O1
VCC
VSS
I/O10
VSS
I/O11
I/O12
A6
A7
I/O2
I/O4
I/O5
I/O6
I/O3
VCC
VSS
I/O7
I/O8
NC
A5
C
D
E
F
Memory array
Row
Addresses
Row
select
A17
A16
A15
A13
A10
VCCQ
I/O15
I/O16
NC
I/O13 DNU
I/O14 A14
I/O Circuit
Data
cont
I/O1~I/O8
NC
A8
A12
A9
/WE
A11
Column select
G
H
Data
cont
I/O9~I/O16
Data
cont
48-FBGA : Top View(Ball Down)
Name
/ZZ
Function
Name
VCC
VCCQ
VSS
/UB
Function
Core Power
Column Addresses
Low Power Modes
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
/CS
I/O Power
/OE
Ground
/CS
/OE
/WE
/UB
/LB
/WE
Upper Byte(I/O9~16)
Lower Byte(I/O 1~8)
Do Not Use
Control Logic
A0~A17
/LB
I/O1~I/O16 Data Inputs/Outputs
NC No Connection
DNU
/ZZ
Revision 0.5
Aug. 2006
2