TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
Typical Characteristics
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
1000
10000
V
CE
= 4V
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
100
1000
V
BE
(sat)
10
100
V
CE
(sat)
1
1
10
100
1000
10000
10
1
10
100
1000
10000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
100
I
C
[A], COLLECTOR CURRENT
I
C
(MAX) (PULSE)
10
P
C
[W], POWER DISSIPATION
80
ms
0.5
60
s
1m
I
C
(MAX) (DC)
s
5m
40
1
TIP41 V
CEO
MAX.
TIP41A V
CEO
MAX.
TIP41B V
CEO
MAX.
TIP41C V
CEO
MAX.
0.1
1
10
100
20
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
www.fairchildsemi.com
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
