TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
Collector Cut-off Current
: TIP41/41A
: TIP41B/41C
Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
Emitter Cut-off Current
* DC Current Gain
Test Condition
Min.
Max.
Units
I
C
= 30mA, I
B
= 0
40
60
80
100
V
V
V
V
I
CEO
V
CE
= 30V, I
B =
0
V
CE
= 60V, I
B
= 0
0.7
0.7
mA
mA
μA
μA
μA
μA
mA
I
CES
V
CE
= 40V, V
EB
= 0
V
CE
= 60V, V
EB
= 0
V
CE
= 80V, V
EB
= 0
V
CE
= 100V, V
EB
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V,I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
I
C
= 6A, I
B
= 600mA
V
CE
= 4V, I
C
= 6A
V
CE
= 10V, I
C
= 500mA, f = 1MHz
3.0
30
15
400
400
400
400
1
I
EBO
h
FE
75
V
CE
(sat)
V
BE
(sat)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
1.5
2.0
V
V
MHz
* Pulse Test: PW≤300ms, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
www.fairchildsemi.com
2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
