RFG50N06, RFP50N06, RF1S50N06SM
Typical Performance Curves
300
I
AS,
AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
125
V
GS
= 10V
STARTING T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
100
100
V
GS
= 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 7V
75
10
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
50
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
25
1
0.01
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
10
0
0
1.5
3.0
4.5
6.0
7.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t
AV,
TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes 9321 and 9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
125
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
, DRAIN CURRENT (A)
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
-55
o
C
25
o
C
2.5
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 50A
175
o
C
75
1.5
50
1.0
25
0.5
0
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
2.0
I
D
= 250µA
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
200
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFG50N06, RFP50N06, RF1S50N06SM Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
