RFG50N06, RFP50N06, RF1S50N06SM
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N06, RFP50N06
RF1S50N06SM
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
60
60
±
20
50
(Figure 5)
(Figure 6)
131
0.877
-55 to 175
300
260
UNITS
V
V
V
A
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
µ
A (Figure 10)
V
DS
= 60V,
V
GS
= 0V
V
GS
=
±
20V
I
D
= 50A, V
GS
= 10V (Figures 9)
V
DD
= 30V, I
D
= 50A
R
L
= 0.6
Ω
, V
GS
= 10V
R
GS
= 3.6
Ω
(Figure 13)
T
C
= 25
o
C
T
C
= 150
o
C
MIN
60
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 48V, I
D
= 50A,
R
L
= 0.96
Ω
I
g(REF)
= 1.45mA
(Figure 13)
-
-
-
-
-
-
(Figure 3)
TO-247
TO-220, TO-263
-
-
-
TYP
-
-
-
-
-
-
-
12
55
37
13
-
125
67
3.7
2020
600
200
-
-
-
MAX
-
4
1
50
±
100
0.022
95
-
-
-
-
75
150
80
4.5
-
-
-
1.14
30
62
UNITS
V
V
µ
A
µ
A
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 25V, V
GS
= 0V
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 50A
I
SD
= 50A, dI
SD
/dt = 100A/
µ
s
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
©2002 Fairchild Semiconductor Corporation
RFG50N06, RFP50N06, RF1S50N06SM Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
