Typical Electrical Characteristics (continued)
1000
V
GS
, GATE-SOURCE VOLTAGE (V)
10
I
D
= 4A
8
V
DS
= 10V
CAPACITANCE (pF)
30V
40V
500
Ciss
200
6
Coss
100
50
4
Crss
f = 1 MHz
V
GS
= 0V
0.3
1
4
10
30
60
2
20
10
0.1
0
0
2
4
6
8
10
12
14
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
IT
LIM
N)
S(O
RD
80
I
D
, DRAIN CURRENT (A)
10
3
1
0.3
0.1
0.03
0.01
0.1
10
0u
s
1m
s
60
POWER (W)
10m
10
1s
10
s
DC
0m
s
SINGLE PULSE
R
θ
JA
=110°C/W
T
A
= 25°C
s
40
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 110
o
C/W
T
A
= 25°C
0.2
0.5
1
2
20
5
10
30
60 100
0
0.001
0.01
0.1
1
10
100
300
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
Single Pulse
D = 0.5
0.2
0.1
0.05
0.02
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 110 °C/W
P(pk)
t
1
t
2
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
T
J
- T
A
= P * R
JA
(t)
θ
Duty Cycle, D = t
1
/ t
2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
NDT3055L Rev.A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
