Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25
o
C
V
DS
= 60 V, V
GS
= 0 V
T
J
=125°C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 2)
60
55
1
50
100
-100
V
mV/
o
C
µA
µA
nA
nA
∆
BV
DSS
/
∆
T
J
I
DSS
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25 C
V
GS
= 10 V, I
D
= 4 A
T
J
=125°C
V
GS
= 4.5 V, I
D
= 3.7 A
o
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
1
1.6
-4
0.07
0.125
0.103
2
V
mV /
o
C
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
0.1
0.18
0.12
Ω
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Notes:
On-State Drain Current
Forward Transconductance
V
GS
= 5 , V
DS
= 10 V
V
DS
= 5 V, I
D
= 4 A
V
DS
= 25, V
GS
= 0 V,
f = 1.0 MHz
10
7
A
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
345
110
30
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 40 V, I
D
= 4 A,
V
GS
= 10 V
V
DD
= 25, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
5
7.5
20
7
13
1.7
3.2
20
20
50
20
20
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.5 A
(Note 2)
2.5
0.8
1.2
A
V
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
guaranteed by design while R
θ
CA
is determined by the user's board design.
the drain pins. R
θ
JC
is
a. 42
o
C/W when mounted on a 1 in
2
pad of
2oz Cu.
b. 95
o
C/W when mounted on a
pad of 2oz Cu.
0.066 in
2
c. 110 C/W when mounted on a 0.00123
in pad of 2oz Cu.
2
o
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDT3055L Rev.A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
