MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1
β
= 10
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
- 40 °C
- 40 °C
0.8
0.6
0.4
0.2
0
V
CE
= 5V
25 °C
125 °C
0.8
25 °C
125 °C
0.6
0.4
0.1
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 80 V
1
Collector Saturation Region
2
T A = 25°C
1.5
0.1
1
I
C
=
1 mA
10 mA
100 mA
0.01
0.5
0.001
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
0
4000
10000
20000
30000
50000
I
B
- BASE CURRENT (uA)
BV
CER
- BREAKDOWN VOLTAGE (V)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
117
Input and Output Capacitance
vs Reverse Voltage
100
f = 1.0 MHz
CAPACITANCE (pF)
116
115
114
113
112
111
0.1
C
ib
10
C
ob
1
1
10
100
1000
0.1
0.1
1
10
100
RESISTANCE (k
Ω
)
V
CE
- COLLECTOR VOLTAGE (V)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
