MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
Collector-Emitter Sustaining Voltage*
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
E
= 100
µA,
I
C
= 0
V
CE
= 60 V, I
B
= 0
V
CB
= 80 V, I
E
= 0
80
4.0
0.1
0.1
V
V
µA
µA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 100 mA, I
B
= 10 mA
I
C
= 100 mA, V
CE
= 1.0 V
100
100
0.25
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 2.0 V,
f = 100 MHz
100
MHz
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
3
Typical Characteristics
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
200
V
CE
= 1V
150
125 °C
Collector-Emitt er Saturation
Voltage vs Collect or Current
0.5
0.4
0.3
0.2
0.1
- 40 °C
β
= 10
100
25 °C
125 °C
25 °C
50
- 40 °C
0.001
I
C
0.01
0.1
- COLLECTOR CURRENT (A)
0
0.1
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
