MMPQ6700
Quad NPN & PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 4.0 V, I
C
= 0
40
40
5.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 0.1 mA
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
30
50
70
0.25
0.90
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
f
T
Output Capacitance
Input Capacitance
Current-Gain Bandwidth Product
V
CB
= 5.0 V, f = 100 kHz
V
BE
= 0.5 V, f = 1.0 kHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
200
4.5
10
pF
pF
MHz
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
