FFB2907A / FMBT2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β
= 10
0.4
0.3
25 °C
400
300
200
100
0
0.1
125 °C
25 °C
0.2
0.1
0
125 ºC
- 40 ºC
- 40 °C
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
BEON
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
125 ºC
- 40 ºC
25 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
0.6
0.4
0.2
0
0.1
25 °C
125 ºC
0.4
β
= 10
0.2
0
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs. Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 35V
10
CAPACITANCE (pF)
16
12
20
Input and Output Capacitance
vs Reverse Bias Voltage
1
C ib
8
4
0
0.1
C ob
0.1
0.01
25
50
75
100
T
A
- AMBIENT TEMPERATURE ( º C)
125
1
10
REVERSE BIAS VOLTAGE (V)
50
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
