FFB2907A / FMBT2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
B
I
CEX
I
CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, V
EB
= 0.5 V
V
CE
= 30 V, V
BE
= 0.5 V
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 125°C
60
60
5.0
50
50
0.02
20
V
V
V
nA
nA
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
75
100
100
100
50
300
0.4
1.6
1.3
2.6
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
V
EB
= 2.0 V, I
C
= 0,
f = 100 kHz
250
6.0
12
MHz
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
V
CC
= 6.0 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
