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MMBT5551 参数 Datasheet PDF下载

MMBT5551图片预览
型号: MMBT5551
PDF下载: 下载PDF文件 查看货源
内容描述: NPN通用放大器 [NPN General Purpose Amplifier]
分类和应用: 晶体放大器晶体管光电二极管
文件页数/大小: 5 页 / 208 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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2N5551- MMBT5551 NPN General Purpose Amplifier
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
h
FE
- TYPICAL PULSED CURRENT GAIN
250
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
0.5
200
125 C
o
0.4
β
= 10
150
0.3
25 C
o
25 C
o
100
0.2
-40 C
50
o
125 C
o
V
CE
= 5V
0.1
- 40 C
1
10
100
o
0
0.1
0.2
0.5
1
2
5
10
20
50
100
0.0
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
1.0
Figure 4. Base-Emitter On Voltage
vs Collector Current
V
BEON
- BASE EMITTER ON VOLTAGE (V)
1.0
V
BESAT
- BASE EMITTER VOLTAGE (V)
β
= 10
0.8
- 40 C
o
- 40 C
o
0.8
25 C
0.6
o
125 C
0.4
o
0.6
25 C
125 C
o
o
0.4
0.2
0.2
V
CE
= 5V
1
10
100
0.0
1
10
100
200
0.0
0.1
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
50
V
CB
= 100V
Figure 6. Input and Output Capacitance
vs Reverse Voltage
30
f = 1.0 MHz
25
CAPACITANCE (pF)
20
10
15
10
C
ib
C
cb
1
10
100
5
1
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
0
0.1
V
CE
- COLLECTOR VOLTAGE (V)
3
2N5551- MMBT5551 Rev. B
www.fairchildsemi.com