2N5551- MMBT5551 NPN General Purpose Amplifier
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
a
= 100°C
V
EB
= 4.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
V
BE
= 0.5V, I
C
= 0, f = 1.0MHz
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0kHz
I
C
= 250 uA, V
CE
= 5.0 V,
R
S
=1.0 kΩ, f=10 Hz to 15.7 kHz
Min.
160
180
6.0
Max.
Units
V
V
V
50
50
50
nA
µA
nA
On Characteristics
DC Current Gain
80
80
30
250
0.15
0.20
1.0
1.0
V
V
V
V
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
f
T
C
obo
C
ibo
H
fe
NF
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
100
300
6.0
20
50
250
8.0
dB
MHz
pF
pF
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
2
2N5551- MMBT5551 Rev. B
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
