IRF840B/IRFS840B
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
10
1
150 C
10
0
o
10
0
25 C
-55 C
o
o
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
※
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
10
1
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
2.0
V
GS
= 20V
1.5
I
DR
, Reverse Drain Current [A]
V
GS
= 10V
10
0
150℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
1.0
※
Note : T
J
= 25
℃
0.5
0
5
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
2500
10
V
DS
= 100V
V
DS
= 250V
2000
V
GS
, Gate-Source Voltage [V]
Capacitance [pF]
C
iss
8
V
DS
= 400V
1500
6
1000
C
oss
C
rss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
500
2
※
Note : I
D
= 8.0 A
0
-1
10
0
10
0
10
1
0
5
10
15
20
25
30
35
40
45
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
