欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRF840 参数 Datasheet PDF下载

IRF840图片预览
型号: IRF840
PDF下载: 下载PDF文件 查看货源
内容描述: 500V N沟道MOSFET [500V N-Channel MOSFET]
分类和应用:
文件页数/大小: 10 页 / 912 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号IRF840的Datasheet PDF文件第2页浏览型号IRF840的Datasheet PDF文件第3页浏览型号IRF840的Datasheet PDF文件第4页浏览型号IRF840的Datasheet PDF文件第5页浏览型号IRF840的Datasheet PDF文件第6页浏览型号IRF840的Datasheet PDF文件第7页浏览型号IRF840的Datasheet PDF文件第8页浏览型号IRF840的Datasheet PDF文件第9页  
IRF840B/IRFS840B
November 2001
IRF840B/IRFS840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
8.0A, 500V, R
DS(on)
= 0.8Ω @V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRF840B
500
8.0
5.1
32
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS840B
8.0
5.1
32
320
8.0
13.4
3.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
134
1.08
-55 to +150
300
44
0.35
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF840B
0.93
0.5
62.5
IRFS840B
2.86
--
62.5
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001