IRF640, RF1S640, RF1S640SM
Typical Performance Curves
1.25
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.15
C, CAPACITANCE (pF)
2400
Unless Otherwise Specified
(Continued)
3000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
1800
C
ISS
1200
C
OSS
600
C
RSS
0.95
0.85
0.75
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
12
25
o
C
9
150
o
C
6
I
SD
, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1000
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150
o
C
g
fs
, TRANSCONDUCTANCE (S)
100
25
o
C
10
3
0
0
6
12
18
24
30
I
D
, DRAIN CURRENT (A)
1
0
0.4
0.8
1.2
1.6
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 28A
16
V
DS
= 40V
V
DS
= 100V
12
V
DS
= 160V
8
4
0
0
15
30
45
60
75
Q
g
, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
