IRF640, RF1S640, RF1S640SM
Typical Performance Curves
1000
OPERATION IN THIS AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
100
10µs
100µs
10
1ms
10ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
1
1
DC
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
(Continued)
30
10V
8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
7V
18
24
12
6V
6
5V
0
4V
0
12
24
36
48
60
100
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 8V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
GS
= 7V
100
I
D
, DRAIN CURRENT (A)
24
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
10
18
V
GS
= 6V
25
o
C
150
o
C
1
12
6
V
GS
= 4V
V
GS
= 5V
0
0
1.0
2.0
3.0
4.0
5.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.5
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
1.2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 18A
0.9
1.8
0.6
1.2
0.3
V
GS
= 10V
V
GS
= 20V
0.6
0
0
15
30
45
60
75
I
D
, DRAIN CURRENT (A)
0
-60 -40
-20
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
