IRF640, RF1S640, RF1S640SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 2)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
18
72
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 18A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 18A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 18A, dI
SD
/dt = 100A/µs
-
120
1.3
-
240
2.8
2.0
530
5.6
V
ns
µC
2. Pulse Test: Pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 3.37mH, R
G
= 25Ω, peak I
AS
= 18A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
20
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
16
12
8
4
0
0
50
100
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
Z
θJC
, TRANSIENT
THERMAL IMPEDANCE (
o
C/W)
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
0.01
0.001
10
-5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
10
-4
10
-3
10
-2
10
-1
1
10
t
1
t
2
t
P
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
