IRF634A
Fig 7. Breakdown Voltage vs. Temperature
12
.
30
.
1&+$11(/
32:(5 026)(7
Fig 8. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
11
.
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
25
.
20
.
10
.
15
.
10
.
@N ts :
oe
1 V =1 V
.
GS
0
2 I =4 0 A
.
D
.5
-0
5
-5
2
0
2
5
5
0
7
5
10
0
o
09
.
@ Nt s:
oe
1 V =0 V
.
GS
2 I = 2 0
µ
A
.
D
5
-0
5
-5
2
0
2
5
5
0
7
5
10
0
o
05
.
08
.
-5
7
15
2
10
5
15
7
00
.
-5
7
15
2
10
5
15
7
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
1
2
0
O ea in i T i Ae
pr to n hs ra
i L m t d b R
DS(on)
s i ie y
1
µ
s
0
1
1
0
1 m
0 s
D
C
1
0
0
@ Nt s:
oe
1 T = 2
o
C
.
C
5
2 T = 1 0
o
C
.
J
5
3 Sn l P le
. ig e u s
1
-2 0
0
1
0
1
1
0
1
2
0
1 0
µ
s
0
1m
s
Fig 10. Max. Drain Current vs. Case Temperature
1
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
8
6
4
1
-1
0
2
0
2
5
5
0
7
5
10
0
15
2
10
5
V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature
[
o
C]
Fig 11. Thermal Response
Thermal Response
10
0
D=0.5
0.2
0.1
@ Notes :
1. Z
θ
J C
(t)=1.69
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ
J C
(t)
P
DM
10
- 1
0.05
0.02
0.01
Z
JC
(t) ,
single pulse
t
1
t
2
θ
10
- 2 - 5
10
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
