1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
V
GS
Top :
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
IRF634A
Fig 2. Transfer Characteristics
1
1
0
1
1
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1
0
0
1
0
0
1 0
o
C
5
2
o
C
5
@N ts :
oe
1 V =0 V
.
GS
2 V =4 V
.
DS
0
3 2 0
µ
s P l e T s
. 5
us et
6
8
1
0
@ Nt s:
oe
1 2 0
µ
s P l e T s
. 5
us et
2 T = 2
o
C
.
C
5
1
-1 -1
0
1
0
1
0
0
1
1
0
- 5
o
C
5
1
-1
0
2
4
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
10
.0
Fig 4. Source-Drain Diode Forward Voltage
I
DR
, R rs D in Cu ent [A]
eve e ra
rr
R
DS(on)
, [
Ω
]
Dr Sour O sis e
ain- ce n-Re tanc
07
.5
V =1 V
0
GS
1
1
0
05
.0
1
0
0
V =2 V
0
GS
02
.5
@ N t : T = 2
o
C
oe
J
5
00
.0
0
1
0
2
0
3
0
4
0
1 0
o
C
5
2
o
C
5
1
-1
0
02
.
04
.
06
.
08
.
10
.
@N ts :
oe
1 V =0 V
.
GS
2 2 0
µ
s P l e T s
. 5
us et
12
.
14
.
16
.
I , Dra C nt [A]
in urre
D
Fig 5. Capacitance vs. Drain-Source Voltage
10
20
C = C + C (C = so td )
iss gs gd
ds
h r e
C =C +C
oss ds gd
C =C
rss gd
V
SD
, S ce ai Vol ge [
our -Dr n ta
V]
Fig 6. Gate Charge vs. Gate-Source Voltage
1
0
V =5 V
0
DS
V =1 5V
2
DS
V =2 0V
0
DS
80
0
V
GS
, Gate-Source Voltage [V]
C
iss
Capacitance [pF]
40
0
C
oss
C
rss
@ Nt s:
oe
1 V =0 V
.
GS
2 f =1 M z
.
H
5
@N ts :I =8 1A
oe
.
D
0
0
5
1
0
1
5
2
0
2
5
3
0
0
0
1
0
1
1
0
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
