Electrical Characteristics (T = 25°C, Unless Otherwise Specified)
J
Inverter Part
Symbol
CE(SAT)
Parameter
Conditions
Min. Typ. Max. Units
V
Collector-Emitter Saturation
V
V
= V = 15V
I
= 10A, T = 25°C
-
-
2.3
V
CC
IN
BS
C
J
Voltage
= 5V
= 0V
V
FWD Forward Voltage
Switching Times
V
V
I
=10A, T = 25°C
-
-
-
-
-
-
-
-
-
-
-
-
-
2.1
V
F
IN
C
J
HS
LS
t
= 300V, V = V = 15V
0.39
0.27
0.59
0.31
0.10
0.52
0.24
0.66
0.33
0.10
-
-
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µA
ON
PN
CC
BS
I
= 10A
C
t
-
C(ON)
V
= 0V ↔ 5V, Inductive Load
IN
t
-
OFF
(Note 3)
t
-
C(OFF)
t
-
rr
t
V
C
= 300V, V = V = 15V
-
ON
PN
CC
BS
I
= 10A
t
-
C(ON)
V
= 0V ↔ 5V, Inductive Load
IN
t
-
OFF
(Note 3)
t
-
-
C(OFF)
t
rr
I
Collector-Emitter
Leakage Current
V
= V
CES
250
CES
CE
Note:
3. t and t
include the propagation delay time of the internal drive IC. t
and t
are the switching time of IGBT itself under the given gate driving condition internally.
C(OFF)
ON
OFF
C(ON)
For the detailed information, please see Figure 4.
100% IC 100% IC
trr
VCE
IC
IC
VCE
VIN
VIN
tON
tOFF
tC(ON)
tC(OFF)
VIN(ON)
VIN(OFF)
10% VCE
10% IC
10% IC 90% IC 10% VCE
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
6
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FSBS10CH60 Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
