FS8S0765RCB
Electrical Characteristics (SenseFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain Source On Resistance
(1)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Note:
(1) Pulse test : Pulse width
≤
300µS, duty 2%
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Condition
V
GS
=0V, I
D
=250µA
V
DS
=650V, V
GS
=0V
V
DS
=520V
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=3.5A
V
DS
=40V, I
D
=3.5A
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
DD
=325V, I
D
=6.5A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=6.5A,
V
DS
=325V (MOSFET
switching time is essentially
independent of operating
temperature)
Min.
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.4
8
1415
100
15
25
60
115
65
40
7
12
Max.
-
200
300
1.6
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
µA
Ω
mho
pF
nS
nC
4
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