FS8S0765RCB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(2)
Single Pulsed Avalanche Energy
(3)
Single Pulsed Avalanche Current
(4)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (T
C
=100°C)
Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Symbol
V
DGR
V
GS
I
DM
E
AS
I
AS
I
D
I
D
V
CC
V
FB
V
S_S
P
D
(Watt H/S)
Derating
T
j
T
A
T
STG
Value
650
±30
28
370
17
7
4.5
35
-0.3 to Vcc
-0.3 to 10
145
1.16
+150
-25 to +85
-55 to +150
Unit
V
V
A
DC
mJ
A
A
DC
A
DC
V
V
V
W
W/°C
°C
°C
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=14mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
