Typical Characteristics
V
Top :
15GVS
10 V
8.0V
7.0V
6.5V
6.0V
101
101
Bottom : 5.5V
℃
150
℃
25
100
℃
-55
100
※
Notes :
※
Notes :
1. V = 50V
2. 250 s Pulse Test
DS μ
μ
1. 250 s Pulse Test
℃
2. TC = 25
-1
10
-1
10
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
VGS = 10V
VGS = 20V
10
0
10
150℃
25℃
※
Notes :
1. V = 0V
GS μ
2. 250 s Pulse Test
※
℃
Note : T = 25
J
-1
10
0
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 100V
VDS = 250V
Crss = C
gd
VDS = 400V
C
iss
C
oss
6
※
Notes :
4
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = 13.4 A
0
0
10
0
5
10
15
20
25
30
35
40
45
50
-1
0
10
1
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
