FJD5304D — High Voltage Fast Switching Transistor
Package Marking and Ordering Information
Device Marking
J5304D
J5304D
Device
FJD5304DTM
FJD5304DTF
Package
D-PAK
D-PAK
Reel Size
13” Dia
13” Dia
Tape Width
-
-
Quantity
2500
2000
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
h
FE
V
CE(sat)
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Conditions
I
C
= 1mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
CB
= 400V, I
B
= 0
V
EB
= 12V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 2.0A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1.0A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
Min.
700
400
12
Typ.
Max. Units
V
V
V
100
250
1
µA
µA
mA
Collector-Emitter Breakdown Voltage I
C
= 5mA, I
B
= 0
10
8
40
0.7
1.0
1.5
1.1
1.2
1.3
0.6
0.1
2.9
0.2
2.5
V
V
V
V
V
V
µs
µs
µs
µs
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1.0A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
t
STG
t
F
t
STG
t
F
V
F
Storage Time
Fall Time
Storage Time
Fall Time
Diode Forward Voltage
V
CLAMP
=200V, I
C
=2.0A,
I
B1
=0.4A, V
BE
(off)=-5V, L=200µH
V
CC
=250V, I
C
=2.0A,
I
B1
=0.4A, I
B2
=-0.4A, T
P
=30µs
I
F
= 2A
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
