FJD5304D — High Voltage Fast Switching Transistor
July 2010
FJD5304D
High Voltage Fast Switching Transistor
Features
•
•
•
•
Built-in Free Wheeling Diode
Wide Safe Operating Area
Small Variance in Storage Time
Suitable for Electronic Ballast Application
Equivalent Circuit
C
B
1
D-PAK
E
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
* Base Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
T
c
= 25°C
T
a
= 25°C
Value
700
400
12
4
8
2
4
30
1.25
150
-55 to 150
Units
V
V
V
A
A
A
A
W
W
°C
°C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Thermal Characteristics
Symbol
R
θja
T
a
= 25°C unless otherwise noted
Parameter
Thermal Resistance Junction-Ambient **
Value
99
Units
°C/W
** Device mounted on minimum pad size.
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
1
www.fairchildsemi.com