FDV305N
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
20
Typ
Max Units
V
Off Characteristics
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 16 V,
V
GS
= 12 V,
V
GS
= –12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
15
1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
I
D
= 250
µA
V
DS
= V
GS
,
I
D
= 250
µA,Referenced
to 25°C
I
D
= 0.9 A
V
GS
= 4.5 V,
I
D
= 0.7 A
V
GS
= 2.5 V,
V
GS
= 4.5V, I
D
= 0.9 A, T
J
= 125°C
V
GS
= 4.5V,
V
DS
= 5 V
V
DS
= 5V,
I
D
= 0.9 A
0.6
1
–3
164
235
220
1.5
V
mV/°C
220
300
303
mΩ
I
D(on)
g
FS
1
3
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
109
30
14
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
4.5
7
8
1.4
9
14
16
2.8
1.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 0.9 A,
1.1
0.26
0.26
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 0.9 A,
d
iF
/d
t
= 100 A/µs
I
S
= 0.29 A
0.75
7.4
2.2
0.29
1.2
A
V
nS
nC
FDV305N Rev D (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
