FDV305N
January 2003
FDV305N
20V N-Channel PowerTrench
MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Features
•
0.9 A, 20 V
R
DS(ON)
= 220 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 300 mΩ @ V
GS
= 2.5 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
•
•
Load switch
Battery protection
Power management
D
D
S
SOT-23
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±
12
0.9
2
0.35
–55 to +150
Units
V
V
A
W
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
357
°C/W
Package Marking and Ordering Information
Device Marking
305
Device
FDV305N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2003
Fairchild Semiconductor Corporation
FDV305N Rev D (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
