Typical Electrical And Thermal Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
30
I
D
= 0.2A
4
V
DS
= 5V
10V
15V
CAPACITANCE (pF)
20
10
C iss
C oss
3
5
3
2
2
f = 1 MHz
V
GS
= 0V
C rss
0 .5
1
2
5
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
10
25
1
1
0 .1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics
.
1
0 .5
5
IT
1m
10
1s
10
s
0m
s
s
4
POWER (W)
I , DRAIN CURRENT (A)
0 .2
0 .1
0 .0 5
RD
S(
)
ON
LIM
SINGLE PULSE
R
θ
JA
=357° C/W
T
A
= 25°C
3
2
V
GS
= 2.7V
SINGLE PULSE
R
θ
J A
= 357 °C/ W
T
A
= 25°C
1
V
DS
DC
1
D
0 .0 2
0 .0 1
0 .5
2
5
10
15
, DRAI N -SOURCE VOLTAGE (V)
25
35
0
0.001
0.01
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIM E (sec)
1
10
D = 0.5
0 .2
0 .1
0 .05
0 .02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 357 °C/W
t
1
T
J
- T
t
2
=P * R
(t)
A
θ
JA
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
FDV301N Rev.F
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
