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FDV301N 参数 Datasheet PDF下载

FDV301N图片预览
型号: FDV301N
PDF下载: 下载PDF文件 查看货源
内容描述: 数字场效应管, N通道 [Digital FET , N-Channel]
分类和应用: 晶体小信号场效应晶体管开关光电二极管PC
文件页数/大小: 5 页 / 100 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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March 1999
FDV301N
Digital FET , N-Channel
General Description
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.
Features
25 V, 0.22 A continuous, 0.5 A Peak.
R
DS(ON)
= 5
@ V
GS
= 2.7 V
R
DS(ON)
= 4
@ V
GS
= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.
SOT-23
Mark:301
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
INVERTER APPLICATION
Vcc
D
D
OUT
IN
G
S
GND
G
S
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless other wise noted
FDV301N
Units
V
DSS
, V
CC
V
GSS
, V
I
I
D
, I
O
P
D
T
J
,T
STG
ESD
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage, V
IN
Drain/Output Current
- Continuous
25
8
0.22
0.5
V
V
A
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
0.35
-55 to 150
6.0
W
°C
kV
THERMAL CHARACTERISTICS
R
θ
JA
357
°C/W
© 1999 Fairchild Semiconductor Corporation
FDV301N Rev.F