FDS9933
Typical Characteristics:
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
1600
I
D
= -5A
4
V
DS
= -4V
-8V
CAPACITANCE (pF)
1200
f = 1 MHz
V
GS
= 0 V
-6V
3
C
iss
800
2
C
oss
400
1
C
rss
0
0
2
4
6
Q
g
, GATE CHARGE (nC)
8
10
0
0
4
8
12
16
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10
1s
10s
1
DC
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25 C
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
o
Figure 8. Capacitance Characteristics.
50
100µs
1ms
10ms
100ms
P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE
R
θJA
= 135°C/W
T
A
= 25°C
30
20
0.1
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135 C/W
o
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9933 Rev C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
