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FDS9933_06 参数 Datasheet PDF下载

FDS9933_06图片预览
型号: FDS9933_06
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道2.5V指定的PowerTrench MOSFET [Dual P-Channel 2.5V Specified PowerTrench MOSFET]
分类和应用:
文件页数/大小: 5 页 / 110 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS9933_06的Datasheet PDF文件第1页浏览型号FDS9933_06的Datasheet PDF文件第3页浏览型号FDS9933_06的Datasheet PDF文件第4页浏览型号FDS9933_06的Datasheet PDF文件第5页  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Typ Max Units  
Off Characteristics  
–20  
V
V
GS = 0 V, ID = –250 mA  
BVDSS  
Drain–Source Breakdown Voltage  
–12  
DBVDSS  
DTJ  
Breakdown Voltage Temperature  
Coefficient  
ID = –250 mA, Referenced to 25°C  
mV/°C  
VDS = –16 V, VGS = 0 V  
–1  
mA  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate–Body Leakage  
VGS = ±12 V,  
VDS = 0 V  
±100  
nA  
On Characteristics  
(Note 2)  
–0.6  
0.8  
1.2  
V
V
DS = VGS, ID = –250 mA  
VGS(th)  
Gate Threshold Voltage  
3
DVGS(th)  
DTJ  
Gate Threshold Voltage  
Temperature Coefficient  
ID = –250 mA, Referenced to 25°C  
mV/°C  
V
GS = –4.5 V,  
ID = –3.2 A  
ID = –1.0 A  
VDS = –5 V  
44  
72  
55  
90  
mW  
RDS(on)  
Static Drain–Source  
On–Resistance  
VGS = –2.5 V,  
VGS = –4.5 V,  
–16  
A
S
ID(on)  
gFS  
On–State Drain Current  
Forward Transconductance  
VDS = –9 V,  
ID = –3.4 A  
8
Dynamic Characteristics  
VDS = –10 V,  
f = 1.0 MHz  
V GS = 0 V,  
Ciss  
Coss  
Crss  
Input Capacitance  
825  
420  
150  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics (Note 2)  
VDD = –10 V,  
VGS = –4.5 V,  
ID = –1 A,  
RGEN = 6 W  
td(on)  
tr  
td(off)  
tf  
Turn–On Delay Time  
Turn–On Rise Time  
Turn–Off Delay Time  
Turn–Off Fall Time  
Total Gate Charge  
Gate–Source Charge  
Gate–Drain Charge  
16  
46  
40  
25  
10  
2.1  
3.3  
40  
80  
70  
40  
20  
ns  
ns  
ns  
ns  
VDS = –6 V,  
ID = –3.2A,  
Qg  
Qgs  
Qgd  
nC  
nC  
nC  
V
GS = –4.5 V  
Drain–Source Diode Characteristics and Maximum Ratings  
–2.0  
–1.2  
IS  
Maximum Continuous Drain–Source Diode Forward Current  
A
V
VSD  
Drain–Source Diode Forward  
Voltage  
VGS = 0 V, IS = –2.0 A (Note 2)  
–0.7  
Notes:  
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.  
a)  
78°C/W when  
mounted on a  
0.5in2 pad of 2  
oz copper  
b)  
125°C/W when  
mounted on a  
0.02 in2 pad of  
2 oz copper  
c)  
135°C/W when  
mounted on a  
minimum pad.  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%  
FDS9933 Rev C