FDS9431A_F085
P-Channel
2.5V
Specified
MOSFET
Typical Characteristics
(continued)
5
I
D
= -1.6A
-V
GS
, G ATE -S O U R CE VO LTAG E (V )
4
V
D S
= -5V
2000
1000
C AP AC I TA NC E (pF)
-15V
3
500
Ciss
2
200
Coss
f = 1 M Hz
V
G S
= 0 V
0.2
0.5
1
2
5
1
100
Crss
10
20
0
0
2
4
Q g , G ATE C H ARG E (nC )
6
8
50
0.1
-V
DS
, D R A IN T O S OU R CE V OLTA GE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
M IT
100
S
RD
( ON
) LI
50
us
40
10
- I
D
, D R AI N C U R R EN T (A)
3
1m
10 m
100
1s
10 s
DC
s
POWER (W)
SINGLE PULSE
o
R
θJA
= 125 C/W
T
A
= 25 C
o
s
30
ms
0 .5
20
0. 05
V
V
=
=
-4.5V
GS
S
-4.5V
G
SINGLE
PUL SE
SING L E
PULSE
=
135 °C/W
R
R
J A
=
125°C/W
θJA
θ
T
A
A
=
25°C
T
=
2 5°C
A
10
0. 01
0 .1
0 .3
1
2
5
10
30
0
0.001
0.01
0.1
1
10
100
1000
- V
D S
, DR A IN -SO UR C E V OLTA GE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
TR ANSI ENT T ER M
H
AL RESISTANC E
1
0.5
0.2
0.1
0
.05
0
.02
0
.01
0. 05
0
0. 02
0
0. 01
0
0.0
001
0. 01
0
0
.01
0.1
t
1
, TI ME (s e c )
1
10
100
300
D= 0
.5
0
.2
0
.1
0. 5
0
0. 2
0
0 1
.0
S i n g le P ul s e
r(t), NORM AL
IZED EFFECTIVE
R
θ
J A
(t) = r(t) * R
θ
J A
R
θ
J A
= 125°C /W
P(p k )
t
1
t
2
T
J
- T
A
= P * R
θ
JA ( t
)
D u t y C y c l e, D = t
1
/t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS9431A_F085 Rev.
A
4
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
