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FDS9431A_10 参数 Datasheet PDF下载

FDS9431A_10图片预览
型号: FDS9431A_10
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道2.5V指定MOSFET [P-Channel 2.5V Specified MOSFET]
分类和应用:
文件页数/大小: 5 页 / 359 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS9431A_10的Datasheet PDF文件第1页浏览型号FDS9431A_10的Datasheet PDF文件第3页浏览型号FDS9431A_10的Datasheet PDF文件第4页浏览型号FDS9431A_10的Datasheet PDF文件第5页  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Typ Max Units  
Off Characteristics  
BVDSS  
Drain-Source Breakdown Voltage  
-20  
V
m
A
VGS = 0 V, ID = -250  
Breakdown Voltage Temperature  
Coefficient  
-28  
D
DSS  
m
°
°
mV/ C  
BV  
D
ID = -250 A,Referenced to 25 C  
TJ  
IDSS  
IGSSF  
Zero Gate Voltage Drain Current  
VDS = -16 V, VGS = 0 V  
VGS = 8 V, VDS = 0 V  
-1  
m
A
Gate-Body Leakage Current,  
Forward  
100  
nA  
IGSSR  
Gate-Body Leakage Current,  
Reverse  
VGS = -8 V, VDS = 0 V  
-100  
-1  
nA  
On Characteristics (Note 2)  
VGS(th)  
Gate Threshold Voltage  
-0.4  
-10  
-0.6  
2
V
m
VDS = VGS, ID = -250  
A
Gate Threshold Voltage  
Temperature Coefficient  
D
GS(th)  
m
°
°
V
ID = -250 A,Referenced to 25 C  
mV/ C  
D
TJ  
RDS(on)  
Static Drain-Source  
On-Resistance  
VGS = -4.5 V, ID = -3.5 A  
VGS = -2.5 V, ID = -3.0 A  
0.110 0.130  
0.140 0.180  
0.155 0.220  
W
W
W
V
GS = -4.5 V, ID = -3.5 A  
°
TJ=125 C  
ID(on)  
gFS  
On-State Drain Current  
VGS = -4.5 V, VDS =-5 V  
A
S
Forward Transconductance  
VDS = -5 V, ID = -3.5 A  
6.5  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
VDS = -10 V, VGS = 0 V,  
f = 1.0 MHz  
405  
170  
45  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics (Note 2)  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDD = -5 V, ID = -1 A,  
VGS = -4.5 V, RGEN = 6  
6.5  
20  
31  
21  
6
13  
35  
50  
35  
8.5  
ns  
ns  
W
ns  
ns  
Qg  
VDS = -5 V, ID = -3.5 A,  
VGS = -4.5 V  
nC  
nC  
nC  
Qgs  
Qgd  
0.8  
1.3  
Drain-Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
-2.1  
-1.2  
A
V
(Note 2)  
VSD  
Drain-Source Diode Forward  
Voltage  
VGS = 0 V, IS = -2.1 A  
-0.7  
Notes:  
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the  
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.  
c) 125° C/W on a minimum  
mounting pad.  
a) 50° C/W when  
mounted on a 1 in2  
pad of 2 oz. copper.  
b) 105° C/W when  
mounted on a 0.04 in2  
pad of 2 oz. copper.  
Scale 1 : 1 on letter size paper  
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
FDS9431A_F085 Rev. A  
2
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